한국전기화학회

Vol.8, No.1, February 2005

The Effect of Annealing Methods on Dopant Activation and Damage Recovery of Phosphorous ion Shower Doped Poly-Si다결정 실리콘 박막 위에 P이온 샤워 도핑 후 열처리 방법에 따르는 도펀트 활성화 및 결함 회복에 관한 효과: JKES Vol.8, No.1, pp.24~23, February 2005; DOI : 10.5229/JKES.2005.8.1.024

Dong-Min Kim, Jae-Sang Ro, and Ki-Yong Lee김동민, 노재상, 이기용

Department of Materials Science and Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-ku, Seoul, 121-791, Korea Samsung SDI CO., LTD., Yongin-City, Gyeonggi-do, 449-902, Korea홍익대학교 공과대학 신소재공학과, ㈜삼성SDI

Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimer-laser-annealed (ELA) poly-Si.The crystallinity of the as-implanted samples was measured using a UVtransmittance. The measured value using UV-tra

Keyword : Ion shower doping, Poly-Si, TFT, Dopant, Damage

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JKES

Vol.8, No.1, February 2005