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한국전기화학회 한국전기화학회

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Vol.8, No.3, August 2005

Electrochemical Formation and Characterization of III-V Compound Semiconductor InSb NanowiresIII-V족 화합물 반도체 InSb 나노와이어의 전기화학적 합성 및 특성 평가
JKES Vol.8, No.3, pp.130~134, August 2005
DOI : 10.5229/JKES.2005.8.3.130
Kwan Hyi Lee, Jong Wook Lee, Ho Dong Park, Won Young Jeung, Jong Yup Lee이관희, 이종욱, 박호동, 정원용, 이종엽
Materials Science and Technology Division, KIST, Seoul 130-650, Korea R&D Division, URi Fine Plating, Chung-buk 361-111, Korea한국과학기술연구원재료연구부, (주)우리정도
To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solutio
Keyword : InSb, Nanowire, Electrodeposition, Characterization.

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